Plasma Enhanced Chemical Vapour and Inductively Coupled Plasma Enhanced Chemical Vapour Deposition S

Descriptions

The University wishes to appoint a Contractor or Contractors to supply two Plasma Enhanced Atomic Layer Deposition Systems. We require two PECVD systems to form part of the core deposition facilities in the NGI cleanrooms. We require both systems to be single wafer load locked and provide the deposition capabilities described in the detailed requirements. The first system (lot 1) must be capable of producing films by PECVD up to a substrate temperature of 700 degrees centigrade on substrates up to 200mm diameter. The second system (lot 2) will use an Inductively Coupled Plasma to allow lower temperature deposition on substrates up to 200mm diameter. Both systems should be capable of processing smaller wafers down to 50mm diameter and piece parts of 22mm x 25mm and 10mm x 10mm and the cost of any additional clamps or carriers required should be included.The equipment must be delivered, installed and commissioned by end-January 2015 at the latest.